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760 nm Laser Diode

Technology

• DBR Single-Frequency Laser Chip

• AlGaAs QW Active Layer

• Facets passivated to withstand high power

  without catastrophic optical damage (COD)

• Epi designed for high reliability

Features

• Wavelength tunable across several lines of the O2 spectrum

  around 760nm

• Pulsed operation for spectral stability at short pulse lengths

• High power for CW applications

• High Slope Efficiency

Description

This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited， single lateral and longitudinal mode beam. Facets are passivated for high reliability. The 760 nm Laser Diode is designed specifically for O2 detection.

Handling Precautions

These devices are sensitive to ESD. When handling the module， grounded work area and

wrist strap must be used. Always store in an antistatic container with all

leads shorted togethe

How To Order

Part number example: PH760DBR040CM. Assign optical power from those available. Use a

three-digit format for all power entries. Call factory for special frequency selection and certification to certain atomic absorption lines.

Package Type

(CS) Chip on Submount

(CM) ‘C’ Mount

(T8) TO-8

Minimum Power (mW)

040 080