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795 nm Laser Diode

Technology

• DBR Single-Frequency Laser Chip

• AlGaAs QW Active Layer

• Epi designed for high reliability

Features

• Available in several package styles

• Pulsed operation for spectral stability at short pulse lengths

• High power for CW applications

• High Slope Efficiency

Description

The PH795DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited， single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Applications for the 795 nm Laser Diode include rubidium-based D1 applications.

Absolute Maximum Rating

1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC = 25°C unless otherwise specified

1/ Butterfly package 2/ TO-8 package

Handling Precautions

These devices are sensitive to ESD. When handling the module， grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.