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suns-Voc測試儀

如何利用Suns-Voc進行漿料與燒結(jié)技術(shù)優(yōu)化

少子壽命，PN結(jié)的好壞，表面及體內(nèi)的復(fù)合情況，材料質(zhì)量、鈍化效果等" b3 X _6 K$ b1 u" ~- I. E1 V; A

Life time，Pseudo-EFF， Pseudo-Voc， Pseudo-FF， Ideality factor

對比該曲線與*后測定的I至V曲線，可以準(zhǔn)確測量出電池的串聯(lián)電阻。

Suns-Voc系統(tǒng)特征

·晶元測定的溫控為25°C

·電壓探針的高精準(zhǔn)度

·兼容磁性探針

·配備全套濃度補正濾色片的疝氣燈

·后支柱可調(diào)節(jié)高度，準(zhǔn)確調(diào)節(jié)亮度

·適用標(biāo)準(zhǔn)I至V曲線圖及Suns-Voc曲線圖

·不受串聯(lián)電阻的影響，測定晶片特征

Suns-Voc Applications

By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present)， the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage， so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel