粉體行業(yè)在線展覽
多晶硅片
面議
北京京運通
多晶硅片
19
項 目 (Item) | 標(biāo) 準(zhǔn) (Spec) | ||
電學(xué)性能 electronic characters | |||
導(dǎo)電類型(type) | P型(B dopant) | N型(P dopant) | |
電阻率(resistivity annealed)(Ω·cm) | 1.0~3.0 | 0.2~2.0;0.8~5;1~15;(custom as required) | |
電阻率不均勻性(inhomogeneity of resistivity) | ≤15% | ≤25% | |
硅片少子壽命(lifetime)(μs) | ≥10.0 | ≥500.0 | |
氧含量(oxygen)(ppma) | ≤20 | ||
碳含量(carbon)(ppma) | ≤1 | ||
晶體結(jié)構(gòu) crystal structure | |||
晶向(orientation) | o | ||
缺陷(swirl and OSF-ring) | 無(none) | ||
位錯密度(dislocation density)(cm-2) | ≤3000 | ||
表面質(zhì)量 appearance | |||
硅落、V缺口、孿晶、裂紋、沾污、針孔 (crack, V-shape,twin, stain,pinhole) | 無(none) | ||
崩邊(edge chips)(mm) | ≤0.5*0.3, no more than 2/wafer | ||
線痕(saw marks)(μm) | ≤15.0 | ||
彎曲度(bow)(μm ) | ≤50.0 | ||
翹曲度(warp)(μm ) | ≤50.0 | ||
硅片尺寸 dimension | |||
邊長&直徑(length and diameter)(mm) | 156.75 | 210 | |
硅片厚度(thickness)(μm) | 180 | 200 | |
TV(μm) | 200 | ±15.0 | |
180 | ±15.0 | ||
TTV(μm) | 200 | 30 | |
180 | 25 | ||
直線段的垂直度(verticality of side) | 90o±0.3o | ||
包裝與儲運 package and carriage | |||
包裝(package) | 1盒400片;1箱1600片;1托48000片。 | ||
400pcs/box,1600pcs/case,48Kpcs/pallet | |||
儲存(Storage) | 溫度(temperature.):10℃~40℃ | ||
濕度(humidity):≤60% |
主導(dǎo)產(chǎn)品包括單晶硅生長爐、區(qū)熔爐、金剛石生長爐等光伏及半導(dǎo)體設(shè)備,直拉單晶硅棒及硅片、區(qū)熔單晶硅棒及硅片等光伏產(chǎn)品,光伏發(fā)電和風(fēng)力發(fā)電等新能源發(fā)電項目及蜂窩式中低溫SCR煙氣脫硝催化劑。主導(dǎo)產(chǎn)品包括單晶硅生長爐、區(qū)熔爐、金剛石生長爐等光伏及半導(dǎo)體設(shè)備,直拉單晶硅棒及硅片、區(qū)熔單晶硅棒及硅片等光伏產(chǎn)品,光伏發(fā)電和風(fēng)力發(fā)電等新能源發(fā)電項目及蜂窩式中低溫SCR煙氣脫硝催化劑。
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