久久综合久久美利坚中国_中曰韩无码视频_久久97久久97精品免视看_黄网址免费永久在线观看免费

儀器簡(jiǎn)介：少子壽命測(cè)試儀性能參數(shù)：

測(cè)量原理 QSSPC（準(zhǔn)穩(wěn)態(tài)光電導(dǎo)）

少子壽命測(cè)量范圍 100 ns-10 ms

測(cè)試模式：QSSPC，瞬態(tài)，壽命歸一化分析

電阻率測(cè)量范圍 3–600 (undoped) Ohms/sq.

注入范圍：1013-1016cm-3

感測(cè)器范圍 直徑40-mm

測(cè)量樣品規(guī)格 標(biāo)準(zhǔn)直徑: 40–210 mm （或更小尺寸）

硅片厚度范圍 10–2000 μm

外界環(huán)境溫度 20°C–25°C

功率要求 測(cè)試儀: 40 W 電腦控制器：200W 光源：60W

通用電源電壓 100–240 VAC 50/60 Hz

主要特點(diǎn):

　　適應(yīng)低電阻率樣片的測(cè)試需要，*小樣品電阻率可達(dá)0.1ohmcm

　　全自動(dòng)操作及數(shù)據(jù)處理

　　對(duì)太陽能級(jí)硅片，測(cè)試前一般不需鈍化處理

　　能夠測(cè)試單晶或多晶硅棒、片或硅錠

　　可以選擇測(cè)試樣品上任意位置

　　能提供**的表面化學(xué)鈍化處理方法

　　對(duì)各道工序的樣品均可進(jìn)行質(zhì)量監(jiān)控：

　　硅棒、切片的出廠、進(jìn)廠檢查

　　擴(kuò)散后的硅片

　　表面鍍膜后的硅片以及成品電池

少子壽命測(cè)試儀

Best available calibrated measurement of carrier recombination lifetime. Widely used for both monocrystalline and multicrystalline wafers.

Product Overview

WCT testers showcase our unique measurement and analysis techniques， including the highly regarded Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments in 1994.

The QSSPC technique is ideal for monitoring multicrystalline wafers， dopant diffusions， and low-lifetime samples. This method complements the use of the transient photoconductance technique that is also standard on this instrument.

The QSSPC lifetime measurement also yields the implied open-circuit voltage (versus illumination) curve， which is comparable to an I-V curve at each stage of a solar cell process.

WCT System Capabilities

Primary application:

Step-by-step monitoring and optimization of a fabrication process.

Other applications:

Sinton Instruments' analysis yields a calibrated carrier injection level for each wafer， so you can interpret lifetime data in a physically precise way. Specific parameters of interest are displayed and logged for each measurement.

• Monitoring initial material quality

• Detecting heavy metals contamination during wafer processing

• Evaluating surface passivation and emitter dopant diffusion

• Evaluating process-induced shunting using the implied I-V measurement

Further Information

技術(shù)參數(shù)：

FAQ:

• What is the recombination lifetime?

• How does the solar cell efficiency depend on the lifetime?

• What determines the lifetime in silicon?

• How is lifetime measured by the Sinton Instruments tools?

• How is the data analyzed?

• Can you measure surface recombination velocity?

• Does the system measure emitter saturation current density?

• Can wafers be measured with no surface passivation (“out of the box”)?

• Can any of these instruments do lifetime maps?

• How do these measurements compare to microwave PCD?

• What lifetimes can be measured?

• What is the smallest sample size?

• How do you measure bulk lifetime on blocks or ingots?

• At what carrier density should I report the result?

• Can the lifetime tester be used to detect Fe contamination?

• How is the instrument calibrated?

• When should wafers be tested inline?

• Does the lifetime tester measure the trapping?

Module and Cell Flash Testers frequently asked questions

主要特點(diǎn)：

常見問題：

WT-2000與WCT-120測(cè)少子壽命的差異？

WCT用的是Quasi-Steady-State Photoconductance（QSSPC準(zhǔn)穩(wěn)態(tài)光電導(dǎo)）而WT2000是微波光電導(dǎo)。

WCT-120/100準(zhǔn)穩(wěn)態(tài)光電導(dǎo)法測(cè)少子壽命的原理？

WCT用的是Quasi-Steady-State Photoconductance（QSSPC準(zhǔn)穩(wěn)態(tài)光電導(dǎo)）